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02 fo 1 egap 00.1.ver 0010je4110sd80r nov 29, 2013 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary da ta sheet ps9531, ps9531l1, ps9531l2, ps9531l3 2.5 a output current, high cmr, igbt gate drive, 8-pin dip photocoupler description the ps9 531, ps9 531l1, ps9 531 l2 and ps9 53 1l3 are optica lly coup led iso lato rs con tai ning a gaal as le d on the input s ide a nd a p ho to d iod e, a sig nal pr oces sing c i rcuit an d a power ou tp ut transistor on the out pu t side on one ch ip. the ps9531 seri es is des ign ed sp ec ifi call y for high common m ode transi en t imm un ity (cmr ), high out pu t current and h igh sw itchin g spee d. the ps9 53 1 series is su ita ble for driv in g igbts an d mos fets. the ps9 53 1 series is in a pl astic dip (d ual in-li ne pack age). the ps9 53 1l1 is l ead be nd ing type fo r long cre e page d istan ce. the ps9531l2 is lead bending type for long creepage distance (gull-wing) for surface mount. the ps9531l3 is l ead be nd ing type (gu ll-w ing ) fo r surfac e m ounti ng. fe at ur es ? lo ng cr ee page di stan ce (8 mm m in .: ps953 1l1, ps953 1l 2) ? larg e pe ak out pu t cu rr ent (2.5 a max ., 2.0 a min.) ? h ig h speed sw it chi ng (t plh , t phl = 175 ns ma x.) ? uvlo (und er vo lta ge lo ck out) prot ecti on wit h hy steres is ? h ig h commo n m od e t ransi en t immun ity ( cm h , cm l = 50 kv/ s mi n.) ? em bosse d ta pe pr odu ct : ps953 1l2 -e3: 1 00 0 pcs/ re el : ps953 1l3 -e3: 1 00 0 pcs/ re el ? pb -free pro duct ? safety standards ? ul appr ov ed: no. e72 422 ? cs a ap prove d: n o. ca 1 013 91 (ca5a, can /csa- c2 2.2 6 006 5, 6 095 0) ? semk o ap prov ed (en 60 065, en 6 09 50) ? din en 60 747 -5-5 (v de 0 88 4-5) app roved (op tio n) applications ? igbt, power mos fet gate driver ? industrial inverter ? ih (i ndu cti on h eati ng) r08ds0114ej0100 rev.1.00 nov 29, 2013 pin connection (top view) 1. nc 2. anode 3. cathode 4. nc 5. v ee 6. v o 7. nc 8. v cc shield 1 2 3 4 8765 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 2 of 20 nov 29, 2013 package dimensions (unit: mm) dip type ps9531 9.25 +0.5 ?0.25 6.5 +0.5 ?0.1 0 to 15 7.62 2.54 1.01 +0.4 ?0.2 0.50.15 0.840.15 0.25 m 3.50.2 4.150.3 2.8 min. lead bending type (gull-wing) for surface mount ps9531l3 6.5 +0.5 ?0.1 9.650.4 0.740.25 0.6350.15 2.54 3.50.2 1.01 +0.4 ?0.2 9.25 +0.5 ?0.25 85 4 1 0.50.15 0.25 m a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 3 of 20 nov 29, 2013 lead bending type for long creepage distance ps9531l1 9.25 +0.5 ?0.25 6.5 +0.5 ?0.1 0 to 15 10.16 2.54 3.50.2 3.870.4 2.8 min. 1.01 +0.4 ?0.2 0.50.15 0.25 m 0.840.15 lead bending type (gull-wing) for long creepage distance (surface mount) ps9531l2 9.25 +0.5 ?0.25 6.5 +0.5 ?0.1 11.80.4 2.54 3.50.2 1.01 +0.4 ?0.2 0.90.25 0.250.2 8 5 4 1 0.50.15 0.25 m a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 4 of 20 nov 29, 2013 photocoupler construction parameter ps9531, ps9531l3 ps9531l1, ps9531l2 air distance (min.) 7 mm 8 mm outer creepage distance (min.) 7 mm 8 mm isolation distance (min.) 0.4 mm 0.4 mm functional diagram 8 6 5 2 3 led output on h off tr. 1 on off tr. 2 off on l input h l shield (tr. 2) (tr. 1) marking example 9531 nt331 r no. 1 pin mark company initial type number assembly lot year assembled (last 1 digit) 3 31 nt rank code in-house code week assembled a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 5 of 20 nov 29, 2013 ordering information part number order number solder plating specification packing style safety standard approval application part number *1 ps9531 ps9531-ax pb-free 50 magazine cases standard ps9531 ps9531l1 ps9531l1-ax (ni/pd/au) products ps9531l1 ps9531l2 ps9531l2-ax (ul, csa, semko ps9531l2 ps9531l3 ps9531l3-ax approved ) ps9531l3 ps9531l2-e3 ps9531l2-e3-ax embossed tape ps9531l2 ps9531l3-e3 ps9531l3-e3-ax 1 000 pcs/reel ps9531l3 PS9531-V PS9531-V-ax 50 magazine cases ul, csa, semko, ps9531 ps9531l1-v ps9531l1-v-ax din en 60747-5-5 ps9531l1 ps9531l2-v ps9531l2-v-ax (vde 0884-5) ps9531l2 ps9531l3-v ps9531l3-v-ax approved ps9531l3 ps9531l2-v-e3 ps9531l2-v-e3-ax embossed tape ps9531l2 ps9531l3-v-e3 ps9531l3-v-e3-ax 1 000 pcs/reel ps9531l3 note: *1. for the application of the safety standar d, following part number should be used. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 6 of 20 nov 29, 2013 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode forward current i f 25 ma peak transient forward current (pulse width < 1 s) i f (tran) 1.0 a reverse voltage v r 5 v power dissipation *1 p d 45 mw detector high level peak output current *2 i oh (peak) 2.5 a low level peak output current *2 i ol (peak) 2.5 a supply voltage (v cc ? v ee ) 0 to 35 v output voltage v o 0 to v cc v power dissipation *3 p c 250 mw isolation voltage *4 bv 5 000 vr.m.s. operating frequency f 50 khz operating ambient temperature t a ? 40 to +125 c storage temperature t stg ? 55 to +150 c notes: *1. reduced to 1.5 mw/ c at t a = 110 c or more. *2. maximum pulse width = 10 s, maximum duty cycle = 0.2% *3. reduced to 3.9 mw/ c at t a = 90 c or more. *4. ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output. pins 1-4 shorted together, 5-8 shorted together. recommended operating conditions parameter symbol min. typ. max. unit supply voltage (v cc ? v ee ) 15 30 v forward current (on) i f (on) 8 10 12 ma forward voltage (off) v f (off) ? 2 0.8 v operating ambient temperature t a ? 40 125 c a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 7 of 20 nov 29, 2013 electrical characteristics (at re commended operating conditions, v ee = gnd, unless otherwise specified) parameter symbol conditions min. typ. *1 max. unit diode forward voltage v f i f = 10 ma, t a = 25 c 1.35 1.56 1.75 v reverse current i r v r = 3 v, t a = 25 c 10 a input capacitance c in f = 1 mhz, v f = 0 v 30 pf detector high level output current i oh v o = (v cc ? 4 v) *2 0.5 2.2 a v o = (v cc ? 15 v) *3 2.0 low level output current i ol v o = (v ee + 2.5 v) *2 0.5 2.4 a v o = (v ee + 15 v) *3 2.0 high level output voltage v oh i o = ? 100 ma *4 v cc ? 3.0 v cc ? 1.3 v low level output voltage v ol i o = 100 ma 0.2 0.5 v high level supply current i cch v o = open 1.7 2.2 ma low level supply current i ccl v o = open 1.7 2.2 ma v uvlo + 10.8 12.3 13.4 uvlo threshold v uvlo ? v o > 5 v, i f = 10 ma 9.5 11.0 12.5 v uvlo hysteresis uvlo hys v o > 5 v, i f = 10 ma 0.4 1.3 v coupled threshold input current (l h) i flh i o = 0 ma, v o > 5 v 2.0 4.0 ma threshold input voltage (h l) v fhl i o = 0 ma, v o < 5 v 0.8 v notes: *1. typical values at t a = 25 c, v cc ? v ee = 30 v. *2. maximum pulse width = 50 s, maximum duty cycle = 0.5%. *3. maximum pulse width = 10 s, maximum duty cycle = 0.2%. *4. v oh is measured with the dc load current in this test ing (maximum pulse width = 2 ms, maximum duty cycle = 20%). switching characteristics (at recommended operating conditions, v ee = gnd, unless otherwise specified) parameter symbol conditions min. typ. *1 max. unit propagation delay time (l h) t plh r g = 10 , c g = 10 nf, 80 175 ns propagation delay time (h l) t phl f = 10 khz, 100 175 ns pulse width distortion (pwd) |t phl ? t plh | duty cycle = 50%, 20 75 ns propagation delay time (difference between any two products) t phl ? t plh i f = 10 ma ? 90 90 ns rise time t r 40 ns fall time t f 40 ns common mode transient immunity at high level output |cm h | t a = 25c, i f = 10 ma, v cc = 30 v, v cm = 1.5 kv 50 kv/ s common mode transient immunity at low level output |cm l | t a = 25c, i f = 0 ma, v cc = 30 v, v cm = 1.5 kv 50 kv/ s note: *1. typical values at t a = 25 c, v cc ? v ee = 30 v. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 8 of 20 nov 29, 2013 test circuit fig. 1 i oh test circuit fig. 2 i ol test circuit fig. 3 v oh test circuit fig. 4 v ol test circuit fig. 5 i cch /i ccl test circuit fig. 6 uvlo test circuit v cc i ol i f = 10 ma v cc v o > 5 v v oh 100 ma i oh v ol 100 ma 1 2 3 4 8 shield 7 6 5 1 2 3 4 8 shield 7 6 5 1.0 f v cc 1.0 f 1 2 3 4 8 shield 7 6 5 1.0 f v cc 1 2 3 4 8 shield 7 6 5 v cc 1.0 f 1 2 3 4 8 shield 7 6 5 1.0 f 1.0 f v cc 1 2 3 4 8 shield 7 6 5 i f i f i f a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 9 of 20 nov 29, 2013 fig. 8 t plh , t phl , t r , t f test circuit and wave forms fig. 9 cmr test circuit and wave forms fig. 7 i flh test circuit i f v o > 5 v i f = 10 ma 10 khz 50% duty cycle v o 500 10 10 nf t phl t plh i f v out 80% 50% 20% t r t f v cc = 30 v v cm = 1.5 kv a b v o i f v oh 26 v 1 v v ol v cm 0 v v o (switch a: i f = 10 ma) v o (switch b: i f = 0 ma) t r t f 1 500 v 10% 90% 1.0 f 1.0 f 1.0 f v cc v cc 1 2 3 4 8 shield 7 6 5 1 2 3 4 8 shield 7 6 5 1 2 3 4 8 shield 7 6 5 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 10 of 20 nov 29, 2013 typical characteristics (t a = 25 c, unless otherwise specified) ambient temperature t a (c) detector power dissipation p c (mw) detector power dissipation vs. ambient temperature ambient temperature t a (c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature ambient temperature t a (c) threshold input current i flh / i fhl (ma) threshold input current vs. ambient temperature 25 50 75 100 150 125 0 300 250 200 150 100 50 25 50 75 100 150 125 0 3 2 1 0 - 50 - 25 100 125 50 75 0 25 150 forward current i f (ma) output voltage v o (v) output voltage vs. forward current 1 0 023 35 30 25 20 15 10 5 50 40 30 20 10 forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage 1.0 0.01 0.1 1 10 100 1.2 1.4 1.6 1.8 2.0 2.2 2.4 t a = 125c 100c 85c 50c 25c - 20c - 40c high level output voltage ? supply voltage v oh ? v cc (v) high level output current i oh (a) high level output voltage ? supply voltage vs. high level output current 0.0 0.5 1.0 1.5 2.5 2.0 0 - 6 - 5 - 4 - 3 - 2 - 1 t a = 25c t a = 125c t a = - 40c v cc = 30 v, v ee = gnd v cc = 30 v, v ee = gnd, i f = 10 ma v cc = 30 v, v ee = gnd, v th = 5 v i flh i fhl remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 11 of 20 nov 29, 2013 forward current i f (ma) propagation delay time, pulse width distortion vs. forward current supply voltage v cc (v) low level output current i ol (a) low level output voltage v ol (v) low level output voltage vs. low level output current propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) 6 8 10 12 14 16 175 150 125 100 75 50 25 0 t phl pwd t plh 15 20 25 30 175 150 125 100 75 50 25 0 t phl pwd t plh load capacitance c g (nf) 10 02 0 30 40 50 175 150 125 100 75 50 25 0 t phl t plh pwd 0.0 0.5 1.0 1.5 2.5 2.0 6 4 2 0 propagation delay time, pulse width distortion vs. load resistance 02 55 07 5 175 150 125 100 75 50 25 0 t phl pwd t plh load resistance r g () propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time t phl , t plh (ns), pulse width distortion (pwd) t phl ? t plh (ns) propagation delay time, pulse width distortion vs. ambient temperature ambient temperature t a (c) 0 - 50 - 25 25 50 75 100 175 150 125 100 75 50 25 0 t phl t plh 125 150 pwd v cc = 30 v, v ee = gnd, i f = 0 ma t a = 25c t a = 125c t a = - 40c v cc = 30 v, v ee = gnd, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% v ee = gnd, i f = 10 ma, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% v cc = 30 v, v ee = gnd, i f = 10 ma, r g = 10 , f = 10 khz, duty cycle = 50% v cc = 30 v, v ee = gnd, i f = 10 ma, c g = 10 nf, f = 10 khz, duty cycle = 50% v cc = 30 v, v ee = gnd, i f = 10 ma, r g = 10 , c g = 10 nf, f = 10 khz, duty cycle = 50% propagation delay time, pulse width distortion vs. load capacitance propagation delay time, pulse width distortion vs. supply voltage remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 12 of 20 nov 29, 2013 ambient temperature t a (c) supply current vs. ambient temperature high level supply current i cch (ma), low level supply current i ccl (ma) ? 25 0 25 50 10075 ? 50 2.5 1.5 2.0 1.0 0.5 0.0 125 150 i cch i ccl ambient temperature t a (c) supply voltage v cc (v) supply current vs. supply voltage high level supply current i cch (ma), low level supply current i ccl (ma) 15 20 30 25 2.5 2.0 0.0 0.5 1.0 1.5 i cch (i f = 10 ma) i ccl (i f = 0 ma) high level output voltage ? supply voltage v oh ? v cc (v) high level output voltage ? supply voltage vs. ambient temperature 0.0 ? 3.0 ? 2.5 ? 2.0 ? 1.5 ? 1.0 ? 0.5 ? 25 0 25 50 10075 ? 50 125 150 ? 25 0 25 50 10075 ? 50 125 150 ? 25 0 25 50 10075 ? 50 125 150 ? 25 0 25 50 10075 ? 50 125 150 ambient temperature t a (c) high level output current i oh (a) high level output current vs. ambient temperature ambient temperature t a (c) low level output voltage v ol (v) low level output voltage vs. ambient temperature 0.5 0.0 0.1 0.2 0.3 0.4 ambient temperature t a (c) low level output current i ol (a) low level output current vs. ambient temperature 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 v cc = 30 v, v ee = gnd, v o = open v ee = gnd, v o = open v cc = 30 v, v ee = gnd, i f = 10 ma, i o = ?100 ma v cc = 30 v, v ee = gnd, i f = 10 ma, i o = 100 ma v cc = 30 v, v ee = gnd, i f = 10 ma, v cc ?v o = 4 v v cc = 30 v, v ee = gnd, i f = 10 ma, v o = 2.5 v remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 13 of 20 nov 29, 2013 output voltage vs. supply voltage supply voltage v cc ? v ee (v) output voltage v o (v) 0 5 10 15 20 14 12 10 8 6 4 2 0 uvlo hys v uvlo+ v uvlo? (12.3 v) (11.0 v) remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 14 of 20 nov 29, 2013 taping specifications (unit: mm) 2.050.05 2.00.1 4.00.1 1.750.1 24.00.3 10.70.1 12.00.1 1.5 +0.1 ?0 4.5 max. 12.80.1 4.10.1 0.30.05 11.50.1 tape direction ps9531l2-e3 outline and dimensions (tape) outline and dimensions (reel) packing: 1 000 pcs/reel 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 25.51.0 29.51.0 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 15 of 20 nov 29, 2013 outline and dimensions (tape) 1.550.1 2.00.1 4.00.1 1.750.1 5.3 max. 10.30.1 12.00.1 1.5 +0.1 ?0 7.50.1 10.40.1 16.00.3 4.750.1 0.350.05 outline and dimensions (reel) packing: 1 000 pcs/reel 3302.0 1001.0 2.00.5 13.00.2 r 1.0 21.00.8 2.00.5 21.51.0 17.51.0 tape direction ps9531l3-e3 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 16 of 20 nov 29, 2013 recommended mount pad dimensions (unit: mm) d c b a part number ps9531l2 ps9531l3 lead bending a lead bending type (gull-wing) for long creepage distance (surface mount) lead bending type (gull-wing) for surface mount 10.2 9.0 b 2.54 2.54 c 1.7 1.7 d 2.2 2.0 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 17 of 20 nov 29, 2013 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temp erature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220c 180c package surface temperature t (c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260c max. 120c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron ? peak temperature (lead part temperature) 350 c or below ? time (each pins) 3 seconds or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 18 of 20 nov 29, 2013 (4) cautions ? fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocoupler?s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. usage cautions 1. this product is weak for static electricity by designed w ith high-speed integrated circuit so protect against static electricity when handling. 2. board designing (1) by-pass capacitor of more than 1.0 f is used between vcc and gnd near device. also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) when designing the printed wiring board, ensure that the pattern of the igbt collectors/emitters is not too close to the input block pattern of the photocoupler. if the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the igbt output side might affect the photocoupler?s led input, leading to malfunction or degradation of characteristics. (if the pattern needs to be close to the input block, to prevent the led from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the led is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) pins 1, 4 (which is an nc *1 pin) can either be connected directly to the gnd pin on the led side or left open. pin 7, which is an nc *1 pin, can either be connected directly to pin 6 or the gnd pin on the output side (photo diode side), or left open. unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. *1 nc: non-connection (no connection) 3. make sure the rise/fall time of the forward current is 0.5 s or less. 4. in order to avoid malfunctions, make sure th e rise/fall slope of the supply voltage is 3 v/ s or less. 5. avoid storage at a high temperature and high humidity. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 19 of 20 nov 29, 2013 specification of vde marks license document parameter symbol spec. unit climatic test class (iec 60068- 1/din en 60068-1) 40/125/21 dielectric strength maximum operating isolation voltage test voltage (partial discharge test, procedure a for type test and random test) u pr = 1.6 u iorm , p d < 5 pc u iorm u pr 1 130 1 808 v peak v peak test voltage (partial discharge test, procedure b for all devices) u pr = 1.875 u iorm , p d < 5 pc u pr 2 119 v peak highest permissible overvoltage u tr 8 000 v peak degree of pollution (din en 60664-1 vde 0110 part 1) 2 comparative tracking index (iec 60112/di n en 60112 (vde 0303 part 11)) cti 175 material group (din en 60664 -1 vde 0110 part 1) iii a storage temperature range t stg ?55 to +150 c operating temperature range t a ?40 to +125 c isolation resistance, minimum value v io = 500 v dc at t a = 25c v io = 500 v dc at t a max. at least 100c ris min. ris min. 10 12 10 11 safety maximum ratings (ma ximum permissible in case of fault, see thermal derating curve) package temperature current (input current i f , psi = 0) power (output or total power dissipation) isolation resistance v io = 500 v dc at t a = tsi tsi isi psi ris min. 175 400 700 10 9 c ma mw a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps9531, ps9531l1, ps9531l2, ps9531l3 chapter title r08ds0114ej0100 rev.1.00 page 20 of 20 nov 29, 2013 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps9531, ps9531l1, ps9531l2, ps9531l3 data sheet description rev. date page summary 0.01 jul 08, 2013 ? first edition issued 1.00 nov 29, 2013 throughout prelimi nary data sheet -> data sheet throughout safety standards approved
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